Evidence map›Paper›PMID 36630451›Full record

ArticleProceedings of the National Academy of Sciences of the United States of America2023

High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.

Xinming Zhuang, Joon-Seok Kim, Wei Huang, Yao Chen, Gang Wang, Jianhua Chen, Yao Yao, Zhi Wang, Fengjing Liu, Junsheng Yu and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Proceedings of the National Academy of Sciences of the United States of America, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Article
  2. Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Xinming ZhuangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.ORCID 0000-0001-6348-7539
Joon-Seok KimDepartment of Materials Science and Engineering, Northwestern University, Evanston, IL 60208.
Wei HuangDepartment of Chemistry, Northwestern University, Evanston, IL 60208.
Yao ChenDepartment of Chemistry, Northwestern University, Evanston, IL 60208.
Gang WangDepartment of Chemistry, Northwestern University, Evanston, IL 60208.
Jianhua ChenDepartment of Chemistry, Northwestern University, Evanston, IL 60208.
Yao YaoDepartment of Chemistry, Northwestern University, Evanston, IL 60208.ORCID 0000-0003-3068-766X
Zhi WangDepartment of Chemistry, Northwestern University, Evanston, IL 60208.
Fengjing LiuSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.
Junsheng YuState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Technology, University of Electronic Science and Technology of China, Chengdu 610054, China.
Yuhua ChengSchool of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China.
Zaixing YangSchool of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.ORCID 0000-0002-9040-8805
Lincoln J LauhonDepartment of Materials Science and Engineering, Northwestern University, Evanston, IL 60208.
Tobin J MarksDepartment of Chemistry, Northwestern University, Evanston, IL 60208.ORCID 0000-0001-8771-0141
Antonio FacchettiDepartment of Chemistry, Northwestern University, Evanston, IL 60208.ORCID 0000-0002-8175-7958

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In

Indexed as

Artificial IntelligenceAutomobile DrivingElectric Power SuppliesHumansOxidesPolyethyleneimineSilicon DioxideOxidesPolyethyleneimineSilicon DioxideEOG monitoringKelvin probe force microscopymetal oxide–polymer blend materialsolution processingsource-gated transistor (SGT)

Identifiers

PMID36630451
PMCPMC9934017

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.