Evidence map›Paper›PMID 36616108›Full record

ArticleNanomaterials (Basel, Switzerland)2023

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.

Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Hsiao-Wen Hung, Cheng-Ying Li, Sean Wu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Kai-Huang ChenDepartment of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan.ORCID 0000-0003-2367-5900
Chien-Min ChengDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.
Na-Fu WangDepartment of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan.
Hsiao-Wen HungGreen Energy and Environment Research Laboratories, Lighting Energy-Saving Department, Intelligent Energy-Saving Systems Division, Industrial Technology Research Institute, Hsinchu 31040, Taiwan.
Cheng-Ying LiDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.
Sean WuDepartment of Chemical and Materials Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of

Indexed as

decayreaction rate constantRRAMvanadium oxide

Identifiers

PMID36616108
PMCPMC9824478

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.