Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes.

Shuaipu Zang, Xuhui Zhang, Yingying Sun, Ning Li, Lei Wang, Lin Song Li

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Article in Frontiers in chemistry, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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6 authors.

Shuaipu ZangKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Xuhui ZhangKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Yingying SunKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Ning LiKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Lei WangKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Lin Song LiKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Harnessing environment-friendly and low-cost multinary Cu-In-Zn-S quantum dots (QDs) as emitters for light-emitting diodes (LEDs) has attracted great attention for display and lighting application. However, suboptimal QD structure is a huge obstacle, which results in serious non-radiative recombination and efficiency roll-off. Herein, we synthesized structure-tailored Cu-In-Zn-S/ZnS//ZnS QDs by improving the reactivity of shell growth by 2-ethylhexanoic acid (EHA) ligands. The EHA-assisted shell growth can boost an extended alloyed layer at the core-shell interface and a smoothed confinement barrier, which effectively passivate the interface defects and suppress Förster resonance energy transfer (FRET) process. These synthesized QDs display a bright photoluminescence emission (quantum yield of 83%) and a larger size of 8.4 nm. Moreover, the resulting LEDs based on the EHA-assisted QDs exhibit a maximum luminance of 8074 cd/m

Indexed as

2-ethylhexanoic acidalloyed interface layerCu-In-Zn-S QDsefficiency roll-offstructure tailoring

Identifiers

PMID36583153

DOI10.3389/fchem.2022.1102514

PMCPMC9792774

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