ArticleNano-micro letters2022
Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications.
Article in Nano-micro letters, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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5 citing papers in PubMed.
- A light-driven multi-state heterojunction transistor for optoelectronic ternary logic circuits.Nature communications · 2026Article
- Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices.Nano-micro letters · 2026Article
- Optical Modification of TMD Heterostructures.Nano letters · 2025Article
- A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors.Nature communications · 2023Article
- Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics.Discover nano · 2023Article
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Authors and funding
9 authors.
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Abstract
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
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