ArticleNanomaterials (Basel, Switzerland)2022
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Effect ofNanomaterials (Basel, Switzerland) · 2023Article
- A Theoretical Study of Interband Absorption Spectra of Spherical Sector Quantum Dots under the Effect of a Powerful Resonant Laser.Nanomaterials (Basel, Switzerland) · 2023Article
- Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots.Nanomaterials (Basel, Switzerland) · 2023Article
- Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons.Nanomaterials (Basel, Switzerland) · 2023Article
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Authors and funding
13 authors.
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Abstract
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 10
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