Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties.

Alexander Vinokurov, Vadim Popelensky, Sergei Bubenov, Nikolay Kononov, Kirill Cherednichenko, Tatyana Kuznetsova, Sergey Dorofeev

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Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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7 authors.

Alexander VinokurovDepartment of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1-3, 119991 Moscow, Russia.

Vadim PopelenskyDepartment of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1-3, 119991 Moscow, Russia.

Sergei BubenovDepartment of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1-3, 119991 Moscow, Russia.

Nikolay KononovProkhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilov, 38, 119991 Moscow, Russia.

Kirill CherednichenkoDepartment of Colloidal and Physical Chemistry, Gubkin Russian State University of Oil and Gas, Leninsky Avenue, 65, 119991 Moscow, Russia.ORCID 0000-0002-1868-8232

Tatyana KuznetsovaDepartment of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1-3, 119991 Moscow, Russia.

Sergey DorofeevDepartment of Chemistry, Lomonosov Moscow State University, Leninskie Gory, 1-3, 119991 Moscow, Russia.ORCID 0000-0003-3820-4853

Funding

Russian Science Foundation 22-23-00540

6 · The paper itself

Abstract

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of μm. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

Indexed as

chalcogensconductivitydopingnanosiliconseleniumsemiconductorsulfurtellurium

Identifiers

PMID36556648

DOI10.3390/ma15248842

PMCPMC9787536

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