Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport.

Xiaogang Yao, Zhen Kong, Shengfu Liu, Yong Wang, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao

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Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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7 authors.

Xiaogang YaoState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.

Zhen KongState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.

Shengfu LiuState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.

Yong WangState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.ORCID 0000-0002-4126-6898

Yongliang ShaoState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.ORCID 0000-0003-2934-1848

Yongzhong WuState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.

Xiaopeng HaoState Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.

Funding

Major innovation project for integrating science, education & industry of Qilu University of Technology (Shandong Academy of Sciences) 2022JBZ01-07National Natural Science Foundation of China 11890702National Natural Science Foundation of China 51872162Universities Twenty Foundational Items of Jinan City 2021GXRC039

6 · The paper itself

Abstract

The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN seed crystals were prepared simultaneously through special temperature field design. It is proved that AlN crystals with different orientations can be obtained at the same temperature field. The structure parameter of AlN crystal was obtained through the characteristic evaluations. In detail, XPS was used to analyze the chemical states and bonding states of the surface of seed crystals. The content of oxygen varied along with distinct orientations. Raman spectrum documented a small level of compressive stress on these crystal seeds. Tested results confirmed that the prepared AlN crystal seeds had high quality.

Indexed as

AlNcompressive stressPVTstructure parameter

Identifiers

PMID36556598

DOI10.3390/ma15248791

PMCPMC9784680

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