Evidence map›Paper›PMID 36535919›Full record

ArticleNature communications2022

An epitaxial graphene platform for zero-energy edge state nanoelectronics.

Vladimir S Prudkovskiy, Yiran Hu, Kaimin Zhang, Yue Hu, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander and 9 more

Abstract read
In one paragraph

Article in Nature communications, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Vladimir S PrudkovskiyTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China.
Yiran HuSchool of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Kaimin Zhang *Tianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China.
Yue Hu *School of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Peixuan JiTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China.
Grant NunnSchool of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Jian ZhaoTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China.
Chenqian ShiTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China.
Antonio TejedaLaboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, 91405, Orsay, France.ORCID http://orcid.org/0000-0003-0125-4603
David WanderInstitut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP, 38042, Grenoble, France.ORCID http://orcid.org/0000-0003-2010-2891
Alessandro De CeccoInstitut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP, 38042, Grenoble, France.
Clemens B WinkelmannInstitut Néel, Univ. Grenoble Alpes, CNRS, Grenoble INP, 38042, Grenoble, France.ORCID http://orcid.org/0000-0003-4320-994X
Yuxuan JiangNational High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.
Tianhao ZhaoSchool of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Katsunori WakabayashiSchool of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, 669-1337, Japan.ORCID http://orcid.org/0000-0002-9147-9939
Zhigang JiangSchool of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.ORCID http://orcid.org/0000-0001-9884-3337
Lei MaTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China. maleixinjiang@tju.edu.cn.
Claire BergerSchool of Physics, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Walt A de HeerTianjin International Center for Nanoparticles and Nanosystems (TICNN), Tianjin University, Nankai District, 30007, China. deheer.walt@gmail.com.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 11774255
6 · The paper itself

Abstract

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

Identifiers

PMID36535919
PMCPMC9763431

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.