ArticleNanomaterials (Basel, Switzerland)2022
Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiOMaterials (Basel, Switzerland) · 2023Article
- Double-Forming Mechanism of TaOMaterials (Basel, Switzerland) · 2023Article
- Improved Uniformity of TaOMaterials (Basel, Switzerland) · 2023Article
- Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System.Nanomaterials (Basel, Switzerland) · 2023Article
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Authors and funding
4 authors.
Funding
Abstract
As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect harmful stimuli. Although a complex CMOS circuit is required to electrically realize a nociceptor, a memristor with threshold switching characteristics can implement the nociceptor as a single device. Here, we suggest a memristor with a Pt/HfO
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Registered trials
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