ArticleNanomaterials (Basel, Switzerland)2022
Extreme Ultraviolet Lighting Using Carbon Nanotube-Based Cold Cathode Electron Beam.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Research Progress in Carbon Nanotube-Based Cold Cathode Electron Guns.Nanomaterials (Basel, Switzerland) · 2025Review
- Boosting the electron beam transmittance of field emission cathode using a self-charging gate.Nature communications · 2024Article
- Optimization of vertically aligned carbon nanotube beam trajectory with the help of focusing electrode in the microchannel plate.Scientific reports · 2023Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
2 authors.
Funding
Abstract
Laser-based plasma studies that apply photons to extreme ultraviolet (EUV) generation are actively being conducted, and studies by direct electron irradiation on Sn for EUV lighting have rarely been attempted. Here, we demonstrate a novel method of EUV generation by irradiating Sn with electrons emitted from a carbon nanotube (CNT)-based cold cathode electron beam (C-beam). Unlike a single laser source, electrons emitted from about 12,700 CNT emitters irradiated the Sn surface to generate EUV and control its intensity. EUV light generated by direct irradiation of electrons was verified using a photodiode equipped with a 150 nm thick Zr filter and patterning of polymethyl methacrylate (PMMA) photoresist. EUV generated with an input power of 6 W is sufficient to react the PMMA with exposure of 30 s. EUV intensity changes according to the anode voltage, current, and electron incident angle. The area reaching the Sn and penetration depth of electrons are easily adjusted. This method could be the cornerstone for advanced lithography for semiconductor fabrication and high-resolution photonics.
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Registered trials
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