ArticleMolecules (Basel, Switzerland)2022
Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures.
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu
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In one paragraphArticle in Molecules (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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9 authors.
Fang-Bin RenXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Shi-Cong JiangXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Chia-Hsun HsuXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Xiao-Ying ZhangXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Peng GaoFujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.ORCID 0000-0002-4963-2282 Wan-Yu WuDepartment of Materials Science and Engineering, National United University, Miaoli 36063, Taiwan.
Yi-Jui ChiuSchool of Mechanical and Automotive Engineering, Xiamen University of Technology, Xiamen 361024, China.ORCID 0000-0001-5632-9321 Shui-Yang LienXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Wen-Zhang ZhuXiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Funding
Educational Office of Fujian Province JT180432National Natural Science Foundation of China 21975260Natural Science Foundation of Fujian Province 2020H0025Natural Science Foundation of Fujian Province 2020J01298Science and Technology Project in Xiamen 3502ZCQ20191002Xiamen Scientific Research Strat-up Foundation for the Returned Overseas Chinese Scholars 5010320004Xiamen University of Technology 40199029Xiamen University of Technology 405011904Xiamen University of Technology HK-HX201243Xiamen University of Technology HK-HX210106Xiamen University of Technology YKJ18008R
6 · The paper itselfAbstract
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH
Indexed as
PlasmaSemiconductorsGalliumOxygenPhotoelectron SpectroscopyGalliumgallium nitrideOxygengallium nitrideplasma-enhanced atomic layer depositionsubstrate temperature
Identifiers
PMID36500217
PMCPMC9740686
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