ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2023
Enhancing the Performance of N-Type Thermoelectric Devices via Tuning the Crystallinity of Small Molecule Semiconductors.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Cross-Conjugated Donor-Acceptor Polymers for High-Performance Organic Electrochemical Transistors.Polymer science & technology (Washington, D.C.) · 2026Article
- Supramolecular chirality largely modulates chemical doping of conjugated polymers.Nature communications · 2025Article
- Additive Manufacturing of Organic Electrochemical Transistors: Methods, Device Architectures, and Emerging Applications.Small (Weinheim an der Bergstrasse, Germany) · 2025Review
- Enhancing the Performance of N-Type Thermoelectric Devices via Tuning the Crystallinity of Small Molecule Semiconductors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023Article
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Authors and funding
12 authors.
Funding
Abstract
In the development of high-performance organic thermoelectric devices, n-type materials, especially with small molecule semiconductors, lags far behind p-type materials. In this paper, three small molecules are synthesized based on electron-deficient naphthalene bis-isatin building blocks bearing different alkyl chains with the terminal functionalized with 3-ethylrhodanine unit and studied their aggregation and doping mechanism in detail. It is found that crystallinity plays an essential role in tuning the doping behavior of small molecules. Molecules with too strong crystallinity tend to aggregate with each other to form large crystalline domains, which cause significant performance degradation. While molecules with weak crystallinity can tolerate more dopants, most of them exhibit low mobility. By tuning the crystallinity carefully, organic thermoelectric devices based on C12NR can maintain high mobility and realize effective doping simultaneously, and a high power factor of 1.07 µW m
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