ArticleNanomaterials (Basel, Switzerland)2022
A Novel Strategy to Enhance the Photostability of InP/ZnSe/ZnS Quantum Dots with Zr Doping.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Synergistic AlNanomaterials (Basel, Switzerland) · 2026Article
- Integrated xTB and simplified Tamm-Dancoff analysis of composition-dependent electronic structure in GaInZnP/ZnSeJournal of molecular modeling · 2026Article
- Indium phosphide quantum dots: advanced synthesis, surface engineering, and biomedical applications in imaging, sensing, and therapy.RSC advances · 2026Review
- Interfacial Defect Suppression and Enhanced Optical Properties in InP Quantum Dots via Two-Step ZnSe Shelling Strategy.Materials (Basel, Switzerland) · 2025Article
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Authors and funding
9 authors.
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Abstract
Plentiful research of InP semiconductor quantum dots (QDs) has been launched over the past few decades for their excellent photoluminescence properties and environmentally friendly characteristics in various applications. However, InP QDs show inferior photostability because they are extremely sensitive to the ambient environment. In this study, we propose a novel method to enhance the photostability of InP/ZnSe/ZnS QDs by doping zirconium into the ZnS layer. We certify that Zr can be oxidized to Zr oxides, which can prevent the QDs from suffering oxidation during light irradiation. The InP/ZnSe/ZnS:Zr QDs maintained 78% of the original photoluminescence quantum yields without significant photodegradation under the irradiation of LED light (450 nm, 3.0 W power intensity) for 14 h, while conventional InP/ZnSe/ZnS QDs dramatically decreased to 29%.
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Registered trials
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