ArticleNanomaterials (Basel, Switzerland)2022
Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- High-Throughput Micro-Combinatorial TEM Phase Mapping of the DC Magnetron Sputtered YNanomaterials (Basel, Switzerland) · 2024Article
- Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities.Nanomaterials (Basel, Switzerland) · 2024Article
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5 authors.
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Abstract
The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf-Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf-Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes. The devices grown on Hf-45 at.% Nb alloys showed improved memristive performances reaching resistive state ratios up to a few orders of magnitude and achieving multi-level switching behavior while consuming low power in comparison with memristors grown on pure metals. The coexistence of threshold and resistive switching is dependent upon the current compliance regime applied during memristive studies. Such behaviors were explained by the structure of the mixed oxides investigated by TEM and XPS. The mixed oxides, with HfO
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