Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor.

Rui Shen, Yifan Jiang, Zhiwei Li, Jiamin Tian, Shuo Li, Tong Li, Qing Chen

Abstract read

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Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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7 authors.

Rui ShenKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Yifan JiangKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.ORCID 0000-0002-0913-449X

Zhiwei LiKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.ORCID 0000-0002-5931-9310

Jiamin TianKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Shuo LiKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Tong LiKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.

Qing ChenKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.ORCID 0000-0002-7919-5159

Funding

National Natural Science Foundation of China 62174006

6 · The paper itself

Abstract

Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks.

Indexed as

field-effect transistors (FET)InAs nanowire (NW)near-infraredoptical synapseP(VDF-TrFE)

Identifiers

PMID36431733

DOI10.3390/ma15228247

PMCPMC9698720

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