Multi-Band Power Amplifier Module with Back-Off Efficiency Improvement using Ultra-Compact 3D Vertical Stack Multi-Chip Package for Cellular Handsets.

A highly integrated multi-mode multi-band (MMMB) power amplifier module (PAM) using hybrid bulk complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), and silicon-on-insulator (SOI) technologies for low band (LB, 824-915 MHz) and high band (HB, 1710-1980 MHz) is proposed. The hybrid MMMB PAM integrates a bulk CMOS controller die, a GaAs HBT power amplifier (PA) die and a SOI switch die on a six-layer laminate. To simultaneously obtain both highly efficient and highly linear characteristics over a wide range of input power levels, a parallel dual-chain PA strategy has been adopted to provide vary bias current and gain for low-power mode (LPM) and high-power mode (HPM) operation. Additionally, a broadband two-section low-pass output matching network design based on the suppression of high-order harmonics is proposed for enhanced efficiency and linearity. In order to achieve further miniaturization, a three-dimensional (3D) die stack multi-chip module (MCM) packaging structure, where the presented CMOS controller die is stacked vertically on the GaAs HBT PA die, is implemented. The measurement results show that the fabricated MMMB PAM achieves 26.1-27 dB of power gains and 38-38.4% of PAEs at an output power (Pout) of 28 dBm in the HPM, and 20.4-20.9 dB of power gains and 12.4-13.8% of PAEs at Pout of 17 dBm in the LPM over LB. For HB, power gains of 24.3-26.7 dB while maintaining PAEs of 38.2-39.9% at Pout of 28 dBm, and power gains of 15.9-17.5 dB while maintaining PAEs of 12.3-12.8% at Pout of 17 dBm are realized in the HPM and LPM, respectively. The fabricated PAM covering five frequency bands and operating at two power modes only occupies a 5 × 3.5 mm