ArticleScientific reports2022
Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure.
Article in Scientific reports, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
6 citing papers in PubMed, 50 citations in OpenAlex.
- Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications.ACS applied materials & interfaces · 2026Article
- AI-driven quantitative review of mobility-stability trade-off in oxide semiconductors.Nano convergence · 2026Review
- Selective Gelation Patterning of Solution-Processed Indium Zinc Oxide Films via Photochemical Treatments.Nanomaterials (Basel, Switzerland) · 2025Article
- Impact of proton-beam irradiation on the electrical reliability and performance of LTPS and a-IGZO thin-film transistors.Scientific reports · 2025Article
- Study of Weight Quantization Associations over a Weight Range for Application in Memristor Devices.Micromachines · 2024Article
- Article
Corrections and comments
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Authors and funding
8 authors at 2 institutions in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The oxygen vacancies and hydrogen in oxide semiconductors are regarded as the primary sources of charge carriers and various studies have investigated the effect of hydrogen on the properties of oxide semiconductors. However, the carrier generation mechanism between hydrogen and oxygen vacancies in an a-IGZO semiconductor has not yet been clearly examined. In this study we investigated the effect of hydrogen and the variation mechanisms of electrical properties of a thin film supplied with hydrogen from the passivation layer. SiO
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Registered trials
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