Evidence map›Paper›PMID 36384960›Full record

ArticleNature communications2022

Compact artificial neuron based on anti-ferroelectric transistor.

Rongrong Cao, Xumeng Zhang, Sen Liu, Jikai Lu, Yongzhou Wang, Hao Jiang, Yang Yang, Yize Sun, Wei Wei, Jianlu Wang and 3 more

Abstract read
In one paragraph

Article in Nature communications, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 30 papers.

0numbers the graph read from it
0cells of the map it votes in
30citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

30 citing papers in PubMed.

  1. Review
  2. Review
  3. Article
  4. Article
  5. Article
  6. Review
  7. Article
  8. Article
  9. Article
  10. Tunable Switching Mechanisms in HfZrOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  11. Article
  12. Article
  13. Article
  14. Article
  15. Advancing the Frontiers of HfOAdvanced materials (Deerfield Beach, Fla.) · 2025
    Review
  16. Article
  17. Heterointerface-Modulated Synthetic Synapses Exhibiting Complex Multiscale Plasticity.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
  18. Article
  19. Epitaxial Antiferroelectric BiACS applied materials & interfaces · 2025
    Article
  20. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Rongrong Cao *College of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China.ORCID 0000-0001-8760-8577
Xumeng Zhang *Frontier Institute of Chip and System, Fudan University, No. 2005 Songhu Road, Yangpu District, 200438, Shanghai, China.ORCID 0000-0002-3828-151X
Sen Liu *College of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China.ORCID 0000-0002-7198-9106
Jikai LuKey Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, 100029, Beijing, China.
Yongzhou WangCollege of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China.
Hao JiangFrontier Institute of Chip and System, Fudan University, No. 2005 Songhu Road, Yangpu District, 200438, Shanghai, China.
Yang YangKey Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, 100029, Beijing, China.
Yize SunKey Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, 100029, Beijing, China.
Wei WeiKey Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, 100029, Beijing, China.
Jianlu WangFrontier Institute of Chip and System, Fudan University, No. 2005 Songhu Road, Yangpu District, 200438, Shanghai, China.
Hui XuCollege of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China.
Qingjiang LiCollege of Electronic Science and Technology, National University of Defense Technology, 410073, Changsha, China. qingjiangli@nudt.edu.cn.ORCID 0000-0001-9779-3198
Qi LiuFrontier Institute of Chip and System, Fudan University, No. 2005 Songhu Road, Yangpu District, 200438, Shanghai, China. qi_liu@fudan.edu.cn.ORCID 0000-0001-7062-831X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Neuromorphic machines are intriguing for building energy-efficient intelligent systems, where spiking neurons are pivotal components. Recently, memristive neurons with promising bio-plausibility have been developed, but with limited reliability, bulky capacitors or additional reset circuits. Here, we propose an anti-ferroelectric field-effect transistor neuron based on the inherent polarization and depolarization of Hf

Indexed as

Neural Networks, ComputerNeuronsComputersReproducibility of ResultsSynapses

Identifiers

PMID36384960
PMCPMC9668812

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.