Evidence map›Paper›PMID 36364652›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Stability of Wafer-Scale Thin Films of Vertically Aligned Hexagonal BN Nanosheets Exposed to High-Energy Ions and Reactive Atomic Oxygen.

Shiyong Huang, Zhi Kai Ng, Hongling Li, Apoorva Chaturvedi, Jian Wei Mark Lim, Roland Yingjie Tay, Edwin Hang Tong Teo, Shuyan Xu, Kostya Ken Ostrikov, Siu Hon Tsang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Shiyong HuangTemasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, Singapore.
Zhi Kai NgTemasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, Singapore.ORCID 0000-0002-7740-8878
Hongling LiSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Apoorva ChaturvediSchool of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.ORCID 0000-0002-6606-0706
Jian Wei Mark LimPlasma Sources and Applications Center, National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore.
Roland Yingjie TaySchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Edwin Hang Tong TeoSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.ORCID 0000-0003-0528-1764
Shuyan XuPlasma Sources and Applications Center, National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore.
Kostya Ken OstrikovSchool of Chemistry and Physics and Centre for Materials Science, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia.
Siu Hon TsangTemasek Laboratories@NTU, 50 Nanyang Drive, Singapore 637553, Singapore.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O

Indexed as

atomic oxygenboron nitridechemical vapor depositioninductively coupled plasmasion bombardmentprotective layer

Identifiers

PMID36364652
PMCPMC9655786

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.