Evidence map›Paper›PMID 36364592›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots.

Shijia Zeng, Zhenbo Li, Wenjiang Tan, Jinhai Si, Yuren Li, Xun Hou

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Synergistic AlNanomaterials (Basel, Switzerland) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Shijia ZengKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.
Zhenbo LiKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.
Wenjiang TanKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.
Jinhai SiKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.
Yuren LiKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.
Xun HouKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Laboratory of Information Photonic Technique, School of Electronics Science and Engineering, Xi'an Jiaotong University, 28 Xianning Road, Xi'an 710049, China.

Funding

National Key Research and Development Program of China 2019YFA0706402National Natural Science Foundation of China 62027822, 62175197Natural Science Basic Research Program of Shaanxi Province of China 2018JM6012
6 · The paper itself

Abstract

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

Indexed as

femtosecond transient absorptionInP/ZnSe/ZnS quantum dotslight-emitting diodesultrafast carrier dynamics

Identifiers

PMID36364592
PMCPMC9657385

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.