Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.

Mu-Jen Lai, Yi-Tsung Chang, Shu-Chang Wang, Shiang-Fu Huang, Rui-Sen Liu, Xiong Zhang, Lung-Chien Chen, Ray-Ming Lin

Abstract read

In one paragraph

Article in Molecules (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Mu-Jen LaiJiangxi Yuhongjin Material Technology Co., Ltd., Fuzhou 344100, China.

Yi-Tsung ChangDepartment of Physics, School of Science, Jimei University, Xiamen 361021, China.ORCID 0000-0002-5202-6224

Shu-Chang WangChangshu Institute of Technology, College of Electronics and Information Engineering, Changshu 215500, China.ORCID 0000-0002-5360-2748

Shiang-Fu HuangDepartment of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.ORCID 0000-0003-3582-9938

Rui-Sen LiuGuangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528200, China.

Xiong ZhangAdvanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.

Lung-Chien ChenDepartment of Electro-Optical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.ORCID 0000-0001-5470-8491

Ray-Ming LinDepartment of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 33302, Taiwan.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external quantum efficiencies (EQEs), which were measured at a current density of 88.6 A cm

Indexed as

GalliumSemiconductorsAluminum CompoundsAluminum Compoundsaluminum gallium nitrideGalliumAlGaNefficiency droopexternal quantum efficiencylight-emitting diodeMOCVD

Identifiers

PMID36364421

DOI10.3390/molecules27217596

PMCPMC9654204

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.