ArticleMicromachines2022
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors.
Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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Who cites it
4 citing papers in PubMed.
- Data encryption/decryption and medical image reconstruction based on a sustainable biomemristor designed logic gate circuit.Materials today. Bio · 2024Article
- Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices.The journal of physical chemistry letters · 2024Review
- Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.Nano convergence · 2023Review
Corrections and comments
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Authors and funding
4 authors.
Funding
Abstract
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of conductive filaments but shows gradual switching characteristics with the p-type Si electrode according to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms of the device are analyzed using an energy band diagram and experimentally verified with random telegraph noise characteristics confirming the trap effects on the device conduction.
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Registered trials
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