Resistive Switching Characteristics of Alloyed AlSiO

Yunseok Lee, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung, Sungjun Kim

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Mimicking biological synapses with a-HfSiONano convergence · 2023
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Yunseok LeeDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Jiung JangDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Beomki JeonDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Kisong LeeDepartment of Information and Communication Engineering, Dongguk University, Seoul 04620, Korea.ORCID 0000-0001-8206-4558

Daewon ChungDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.ORCID 0000-0001-5345-0011

Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Funding

Korea Institute of Energy Technology Evaluation and Planning 20224000000020National Research Foundation of Korea 2021R1C1C1004422

6 · The paper itself

Abstract

Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteristics, and thus has been studied as a next-generation memory application and neuromorphic system area. In this paper, AlSiO

Indexed as

alloyed materialsmemristorneuromorphic systemresistive switching

Identifiers

PMID36363111

DOI10.3390/ma15217520

PMCPMC9656227

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.