Binary THz modulator based on silicon Schottky-metasurface.

Saeedeh Ahadi, Mohammad Neshat, Mohammad Kazem Moravvej-Farshi

Abstract read

In one paragraph

Article in Scientific reports, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

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1 · What the graph read from it

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4 · The record

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5 · Who and what money

Authors and funding

3 authors.

Saeedeh AhadiNano Plasmo-Photonic Research Group, Faculty of Electrical and Computer Engineering, Tarbiat Modares University, P. O. Box 14115-194, Tehran, 1411713116, Iran.

Mohammad NeshatSchool of Electrical and Computer Engineering, College of Engineering, University of Tehran, Tehran, 1439957131, Iran.

Mohammad Kazem Moravvej-FarshiNano Plasmo-Photonic Research Group, Faculty of Electrical and Computer Engineering, Tarbiat Modares University, P. O. Box 14115-194, Tehran, 1411713116, Iran. moravvej@modares.ac.ir.ORCID http://orcid.org/0000-0002-8954-6418

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We propose a metasurface THz modulator based on split-ring resonators (SRRs) formed by four interconnected horizontal Si-Au Schottky diodes. The equivalent junction capacitance of each SRR in the proposed modulator is much smaller than that of the previously reported metasurface counterparts with vertical Schottky junctions, leading to a higher modulation speed. To modulate a THz incident signal by the proposed metasurface, we vary the bias voltage externally applied to the Schottky junctions. Applying a reverse bias of V

Identifiers

PMID36344578

DOI10.1038/s41598-022-23534-w

PMCPMC9640677

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