Evidence map›Paper›PMID 36322656›Full record

ArticleScience advances2022

Reconfiguring band-edge states and charge distribution of organic semiconductor-incorporated 2D perovskites via pressure gating.

Songhao Guo, Yahui Li, Yuhong Mao, Weijian Tao, Kejun Bu, Tonghuan Fu, Chang Zhao, Hui Luo, Qingyang Hu, Haiming Zhu and 4 more

Abstract read
In one paragraph

Article in Science advances, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 17 papers.

0numbers the graph read from it
0cells of the map it votes in
17citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

17 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Songhao GuoCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.ORCID 0000-0003-0570-0164
Yahui LiSchool of Engineering, Westlake University, Hangzhou, China.
Yuhong MaoCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
Weijian TaoZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China.ORCID 0000-0002-6162-391X
Kejun BuCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.ORCID 0000-0002-1466-2764
Tonghuan FuCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
Chang ZhaoZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China.
Hui LuoCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
Qingyang HuCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.ORCID 0000-0002-2742-3017
Haiming ZhuZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, China.ORCID 0000-0001-7747-9054
Enzheng ShiSchool of Engineering, Westlake University, Hangzhou, China.ORCID 0000-0003-1803-3858
Wenge YangCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.ORCID 0000-0001-8436-8731
Letian DouDavidson School of Chemical Engineering, Purdue University, West Lafayette, IN, USA.ORCID 0000-0001-6411-8591
Xujie LüCenter for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.ORCID 0000-0001-8402-7160

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor-incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical-rather than chemical or thermal-regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a "pressure gating" strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.

Identifiers

PMID36322656
PMCPMC9629702

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.