ArticleRSC advances2022
Mechanism and principle of doping: realizing of silver incorporation in CdS thin film
Article in RSC advances, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
3 citing papers in PubMed.
- Influence of Sb-doping on structural, optical and UV photodetector properties of CdS thin films.Scientific reports · 2026Article
- Fluorescence dye-conjugated magnetic core-shell silica nanoparticles for enhanced nucleic acid visualization.RSC advances · 2025Article
- Towards a promising systematic approach to the synthesis of CZTS solar cells.Scientific reports · 2023Article
Corrections and comments
- Erratum issued
Authors and funding
10 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
A high-quality buffer layer serves as one of the most significant issues that influences the efficiency of solar cells. Doping in semiconductors is an important strategy that can be used to control the reaction growth. In this study, the influence of Ag doping on the morphological, optical and electrical properties of CdS thin films have been obtained. Herein, we propose the mechanism of CdS film formation with and without Ag ions, and we found that changes in the reaction of preparing CdS by the chemical bath deposition (CBD) method cause a shift in the geometric composition of the CdS film. XRD showed that the position of peaks in the doped films are displaced to wider angles, indicating a drop in the crystal lattice constant. The optical analysis confirmed direct transition with an optical energy gap between 2.10 and 2.43 eV. The morphological studies show conglomerates with inhomogeneously distributed spherical grains with an increase of the Ag ratio. The electrical data revealed that the annealed Ag-doped CdS with 5% Ag has the highest carrier concentration (3.28 × 10
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