Evidence map›Paper›PMID 36311419›Full record

ArticleFrontiers in chemistry2022

Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors.

Fangfang Chen, Dingwen Cao, Juanjuan Li, Yong Yan, Di Wu, Cheng Zhang, Lenan Gao, Zhaowei Guo, Shihong Ma, Huihui Yu and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Frontiers in chemistry, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Enhanced SWIR photodetection in TeScientific reports · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Fangfang ChenSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Dingwen CaoSchool of Physics, Henan Normal University, XinXiang, China.
Juanjuan LiSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Yong YanSchool of Physics, Henan Normal University, XinXiang, China.
Di WuSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Cheng ZhangSchool of Materials Science and Engineering, National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, Henan University of Science and Technology, Luoyang, China.
Lenan GaoSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Zhaowei GuoSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Shihong MaSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.
Huihui YuAcademy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China.
Pei LinSchool of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Research on elemental 2D materials has been experiencing a renaissance in the past few years. Of particular interest is tellurium (Te), which possesses many exceptional properties for nanoelectronics, photonics, and beyond. Nevertheless, the lack of a scalable approach for the thickness engineering and the local properties modulation remains a major obstacle to unleashing its full device potential. Herein, a solution-processed oxidative etching strategy for post-growth thickness engineering is proposed by leveraging the moderate chemical reactivity of Te. Large-area ultrathin nanosheets with well-preserved morphologies could be readily obtained with appropriate oxidizing agents, such as HNO

Indexed as

field-effect transistorsoxidative etchingpolarizd infrared photodetectiontellurenethickness engineering

Identifiers

PMID36311419
PMCPMC9606353

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.