Evidence map›Paper›PMID 36296044›Full record

ArticleMicromachines2022

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics.

Georgy Teplov, Dmitry Zhevnenko, Fedor Meshchaninov, Vladislav Kozhevnikov, Pavel Sattarov, Sergey Kuznetsov, Alikhan Magomedrasulov, Oleg Telminov, Evgeny Gornev

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Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Georgy TeplovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Dmitry ZhevnenkoLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Fedor MeshchaninovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Vladislav KozhevnikovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Pavel SattarovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Sergey KuznetsovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Alikhan MagomedrasulovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Oleg TelminovLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.
Evgeny GornevLaboratory for the Study of Neuromorphic Systems, Non-Volatile Memory Laboratory, Joint-Stock Company Molecular Electronics Research Institute, 124460 Moscow, Russia.

Funding

Ministry of Science and Higher Education of the Russian Federation 075-15-2020-791
6 · The paper itself

Abstract

The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of six Ni/Si

Indexed as

compact modelingdegradationmemristorsilicon nitride

Identifiers

PMID36296044
PMCPMC9610922

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