ArticleNature communications2022
Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films.
Article in Nature communications, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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Who cites it
7 citing papers in PubMed.
- Single-shot X-ray and near-infrared (NIR) dual-mode fusion imaging based on bifunctional NIR scintillators.Light, science & applications · 2025Article
- Impact of Charge Transport Layers on the Structural and Optoelectronic Properties of Coevaporated CuACS applied materials & interfaces · 2025Article
- Breaking the mobility-stability dichotomy in organic semiconductors through adaptive surface doping.Proceedings of the National Academy of Sciences of the United States of America · 2025Article
- 2D Vacancy Confinement in Anatase TiOAdvanced materials (Deerfield Beach, Fla.) · 2025Article
- Limits to Hole Mobility and Doping in Copper Iodide.Chemistry of materials : a publication of the American Chemical Society · 2023Article
- Electrochemistry of Thin Films and Nanostructured Materials.Molecules (Basel, Switzerland) · 2023Article
- Carrier Dynamics in Solution-Processed CuI as a P-Type Semiconductor: The Origin of Negative Photoconductivity.The journal of physical chemistry letters · 2023Article
Corrections and comments
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Authors and funding
10 authors.
Funding
Abstract
As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.
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Registered trials
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