ArticleiScience2022
High sensitivity of room-temperature terahertz photodetector based on silicon.
Article in iScience, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Upconversion detection of terahertz wave with nanosecond pulse duration using continuous-wave laser.Scientific reports · 2026Article
- High-Performance Room-Temperature Terahertz Photodetection Using 2-Dimensional Electron Gas Channel Transport.Research (Washington, D.C.) · 2025Article
- Signal preprocessing for foreign body detection using terahertz real-time non-destructive imaging system.PloS one · 2025Article
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Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz (THz) band, a very promising electromagnetic band for the next-generation technology. Here, we report a high sensitivity of room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure for easy integration. The detector achieves a responsivity of 122 kV W
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