Evidence map›Paper›PMID 36234760›Full record

ArticleMolecules (Basel, Switzerland)2022

Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model.

Dan Wu, Hechun Zhang, Haochen Liu, Wenhui Li, Xiangtian Xiao, Kanming Shi, Taikang Ye, Jiayun Sun, Zhaowen Lin, Jing Liu and 3 more

Abstract read
In one paragraph

Article in Molecules (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Dan WuCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.
Hechun ZhangCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.
Haochen LiuDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Wenhui LiDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Xiangtian XiaoDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Kanming ShiDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Taikang YeDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Jiayun SunDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Zhaowen LinCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.
Jing LiuCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.ORCID 0000-0003-1100-2688
Mingxia QiuCollege of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China.
Aung Ko Ko KyawDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.ORCID 0000-0003-2399-9788
Kai WangDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.ORCID 0000-0003-0443-6955

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes.

Indexed as

coupled opto-electronic modelperovskite photodetectorp-i-n photodiode

Identifiers

PMID36234760
PMCPMC9571005

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.