Evidence map›Paper›PMID 36234608›Full record

ArticleNanomaterials (Basel, Switzerland)2022

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature.

Chunlan Wang, Yuqing Li, Yebo Jin, Gangying Guo, Yongle Song, Hao Huang, Han He, Aolin Wang

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Chunlan WangSchool of Science, Xi'an Polytechnic University, Xi'an 710048, China.ORCID 0000-0002-0169-3019
Yuqing LiSchool of Science, Xi'an Polytechnic University, Xi'an 710048, China.
Yebo JinSchool of Science, Xi'an Polytechnic University, Xi'an 710048, China.
Gangying GuoSchool of Science, Xi'an Polytechnic University, Xi'an 710048, China.
Yongle SongSchool of Science, Xi'an Polytechnic University, Xi'an 710048, China.
Hao HuangGuangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.
Han HeGuangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.
Aolin WangGuangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.

Funding

the National Natural Science Foundation of China 11604252the Program of State Key Laboratory of Infrared Physics M202001the Program of the Key Laboratory of Artificial Microstructure, Ministry of Education 13022019af002the Science and Technology Program of Shaanxi Province 2017JQ1015the Start-Up Funds of Xi'an Polytechnic University BS15026
6 · The paper itself

Abstract

Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (V

Indexed as

a-InGaZnOelectrical propertiesoxygen plasmaTFTs

Identifiers

PMID36234608
PMCPMC9565279

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.