Evidence map›Paper›PMID 36234461›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping.

Doohyung Kim, Jihyung Kim, Sungjun Kim

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Epitaxial BiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Doohyung KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Jihyung KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Funding

Korea Institute of Energy Technology Evaluation and Planning(KETEP) and the Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea 20224000000020National Research Foundation of Korea (NRF) grant funded by the Ministry of Science 2021K1A3A1A4909807
6 · The paper itself

Abstract

Resistive random-access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high-density structure, and high-speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), producing inaccurate results in neuromorphic systems. In this article, we fabricated nitrogen-doped tantalum oxide (TaO

Indexed as

depressionnitrogen dopingpotentiationresistive switchingRRAMTaOxvariability

Identifiers

PMID36234461
PMCPMC9565720

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.