Evidence map›Paper›PMID 36234198›Full record

ArticleMaterials (Basel, Switzerland)2022

Improved Environment Stability of Y

Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jaewon Jang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Sol-Gel-Processed YNanomaterials (Basel, Switzerland) · 2023
    Article
  2. Sol-Gel-Processed YNanomaterials (Basel, Switzerland) · 2023
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Hae-In KimSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
Taehun LeeSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
Won-Yong LeeSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.ORCID 0000-0002-8056-4935
Kyoungdu KimSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
Jin-Hyuk BaeSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.ORCID 0000-0003-3217-1309
In-Man KangSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.ORCID 0000-0002-7726-9740
Sin-Hyung LeeSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.
Kwangeun KimSchool of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Korea.ORCID 0000-0001-6942-7481
Jaewon JangSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.ORCID 0000-0003-1908-0015

Funding

National Research Foundation of Korea 2021M3F3A2A03017764National Research Foundation of Korea 2022R1A2C1006317
6 · The paper itself

Abstract

In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was investigated. The Y2O3 RRAM devices with a 20 nm thick Ag top electrode showed an increase in the low resistance state (LRS) and high resistance state (HRS) and a decrease in the HRS/LRS ratio after 30 days owing to oxidation and corrosion of the Ag electrodes. However, Y2O3 RRAM devices with inert Au-passivated Ag electrodes showed a constant RRAM device performance after 30 days. The 150 nm-thick Au passivation layer successfully suppressed the oxidation and corrosion of the Ag electrode by minimizing the chance of contact between water or oxygen molecules and Ag electrodes. The Au/Ag/Y2O3/ITO RRAM devices exhibited more than 300 switching cycles with a decent resistive window (>103). They maintained constant LRS and HRS resistances for up to 104 s, without significant degradation of nonvolatile memory properties for 30 days while stored in air.

Indexed as

environment stabilitypassivationRRAMsol-gelY2O3

Identifiers

PMID36234198
PMCPMC9572085

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.