Evidence map›Paper›PMID 36145040›Full record

ArticleNanomaterials (Basel, Switzerland)2022

High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO

Ke-Jing Lee, Yu-Chuan Weng, Li-Wen Wang, Hsin-Ni Lin, Parthasarathi Pal, Sheng-Yuan Chu, Darsen Lu, Yeong-Her Wang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Multi-Level Resistive Al/GaNanomaterials (Basel, Switzerland) · 2023
    Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Ke-Jing LeeProgram on Semiconductor Process Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 701, Taiwan.ORCID 0000-0001-6607-5759
Yu-Chuan WengDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan.
Li-Wen WangDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan.
Hsin-Ni LinDepartment of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan.
Parthasarathi PalDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan.
Sheng-Yuan ChuDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan.ORCID 0000-0003-2195-7613
Darsen LuDepartment of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan.
Yeong-Her WangProgram on Semiconductor Process Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 701, Taiwan.ORCID 0000-0002-5898-7229

Funding

Ministry of Science and Technology of Taiwan MOST 108-2221-E-006-040-MY3.
6 · The paper itself

Abstract

We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO

Indexed as

argon plasma treatmentelectrical synapsenon-identical pulse waveformssynaptic plasticity

Identifiers

PMID36145040
PMCPMC9501455

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.