Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates.

Long Xu, Yuehan Cao, Tianwei Song, Caixia Xu

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Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

4 authors.

Long XuChongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China.ORCID 0000-0002-3243-4087

Yuehan CaoChongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China.

Tianwei SongChongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China.

Caixia XuSchool of Primary Education, Chongqing Normal University, Chongqing 400700, China.

Funding

National Natural Science Foundation of China 11804036National Natural Science Foundation of China 61805206the Chongqing Municipal Training Program of Innovation and Entrepreneurship for Under-graduates S202210635343

6 · The paper itself

Abstract

In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was found to be beneficial for reducing the threshold and enhancing the resonant lasing emission within the periodic structures. Compared with undoped and Si-doped GaN thin films, p-type Mg-doped GaN thin films demonstrated a better lasing emission performance. The lasing energy level system and defect densities played vital roles in the lasing emission. This work is beneficial to the realization of multifunctional applications in optoelectronic devices.

Indexed as

gallium nitridelasing actionpatterned sapphire substrateresonant structure

Identifiers

PMID36145026

DOI10.3390/nano12183238

PMCPMC9505499

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.