Evidence map›Paper›PMID 36145010›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Independent Dual-Channel Approach to Mesoscopic Graphene Transistors.

Fernando Sánchez, Vicenta Sánchez, Chumin Wang

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Flat-Band AC Transport in Nanowires.Nanomaterials (Basel, Switzerland) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Fernando SánchezInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.
Vicenta SánchezDepartamento de Física, Facultad de Ciencias, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.
Chumin WangInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.ORCID 0000-0002-2737-9722

Funding

National Autonomous University of Mexico PAPIIT-IN110020National Autonomous University of Mexico PAPIIT-IN112522
6 · The paper itself

Abstract

Graphene field-effect transistors (GFETs) exhibit unique switch and sensing features. In this article, GFETs are investigated within the tight-binding formalism, including quantum capacitance correction, where the graphene ribbons with reconstructed armchair edges are mapped into a set of independent dual channels through a unitary transformation. A new transfer matrix method is further developed to analyze the electron transport in each dual channel under a back gate voltage, while the electronic density of states of graphene ribbons with transversal dislocations are calculated using the retarded Green's function and a novel real-space renormalization method. The Landauer electrical conductance obtained from these transfer matrices was confirmed by the Kubo-Greenwood formula, and the numerical results for the limiting cases were verified on the basis of analytical results. Finally, the size- and gate-voltage-dependent source-drain currents in GFETs are calculated, whose results are compared with the experimental data.

Indexed as

edge reconstruction defectsgraphene field-effect transistorindependent dual-channel methodlinear dislocationsquantum capacitance

Identifiers

PMID36145010
PMCPMC9504710

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.