ArticleNanoscale advances2021
A nanoscale vacuum field emission gated diode with an umbrella cathode.
Article in Nanoscale advances, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- High-Power Terahertz Emission from Picosecond Nano-Plasma Switching Driven by Secondary Electron Emission Avalanche.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Achieving High-Temperature Measurement Using Thermionic Emission from a W-LaMaterials (Basel, Switzerland) · 2026Article
- Research on unit circuits based on cathode modulated vacuum/air channel electron tube.Microsystems & nanoengineering · 2026Article
- Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Article
- Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics.Micromachines · 2023Article
- A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect.Micromachines · 2022Article
Corrections and comments
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Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
A nanoscale field emission vacuum channel gated diode structure is proposed and a tungsten cathode with an umbrella-like geometry and sharp vertical edge is fabricated. The edge of the suspended cathode becomes the field emission surface. Unlike in the traditional transistor with the gate typically located between the source and the drain, the bottom silicon plate becomes the gate here and the anode terminal is located between the umbrella cathode and the gate. The fabricated devices show excellent diode characteristics and the gated diode structure is attractive for extremely low gate leakage.
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Registered trials
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