ArticleScience advances2022
Reduced dopant-induced scattering in remote charge-transfer-doped MoS
Article in Science advances, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
What it found
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Who cites it
9 citing papers in PubMed.
- In-Series Production of Integrated Bi-Doped Laser-Induced Graphene Sensors for Simultaneous Detection of Zn(II), Cd(II), and Pb(II).ACS measurement science au · 2026Article
- Article
- Dual-Step Chemical Treatment of Wafer-Scale Metal-Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides.ACS nano · 2025Article
- Strategic Mobility Engineering in 2D Semiconductor-based FETs for Enhanced Electronic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Article
- Synchronized Photoluminescence and Electrical Mobility Enhancement in 2D WSJournal of the American Chemical Society · 2024Article
- Optical Studies of Doped Two-Dimensional Lead Halide Perovskites: Evidence for Rashba-Split Branches in the Conduction Band.ACS nano · 2024Article
- The interface microenvironment mediates the emission of a semiconductor nanoclusterChemical science · 2023Article
- Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.Nanomaterials (Basel, Switzerland) · 2022Review
Corrections and comments
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Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS
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Registered trials
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