ArticleNanomaterials (Basel, Switzerland)2022
Binary-Synaptic Plasticity in Ambipolar Ni-Silicide Schottky Barrier Poly-Si Thin Film Transistors Using Chitosan Electric Double Layer.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate.Nanomaterials (Basel, Switzerland) · 2024Article
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2 authors.
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Abstract
We propose an ambipolar chitosan synaptic transistor that effectively responds to binary neuroplasticity. We fabricated the synaptic transistors by applying a chitosan electric double layer (EDL) to the gate insulator of the excimer laser annealed polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Ni-silicide (NiSi) Schottky-barrier source/drain (S/D) junction. The undoped poly-Si channel and the NiSi S/D contact allowed conduction by electrons and holes, resulting in artificial synaptic behavior in both p-type and n-type regions. A slow polarization reaction by the mobile ions such as anions (CH
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