ArticleNanoscale research letters2022
Multi-level Cells and Quantized Conductance Characteristics of Al
Article in Nanoscale research letters, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
9 citing papers in PubMed.
- Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device.Materials (Basel, Switzerland) · 2024Article
- Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices.Scientific reports · 2024Article
- Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing.Sensors (Basel, Switzerland) · 2023Review
- The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfONanomaterials (Basel, Switzerland) · 2023Article
- Improved Uniformity of TaOMaterials (Basel, Switzerland) · 2023Article
- Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System.Nanomaterials (Basel, Switzerland) · 2023Article
- Non-Volatile Memory and Synaptic Characteristics of TiN/CeOMaterials (Basel, Switzerland) · 2022Article
- Resistive Switching Characteristics of Alloyed AlSiOMaterials (Basel, Switzerland) · 2022Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors.
Funding
Abstract
Recently, various resistance-based memory devices are being studied to replace charge-based memory devices to satisfy high-performance memory requirements. Resistance random access memory (RRAM) shows superior performances such as fast switching speed, structural scalability, and long retention. This work presented the different filament control by the DC voltages and verified its characteristics as a synaptic device by pulse measurement. Firstly, two current-voltage (I-V) curves are characterized by controlling a range of DC voltages. The retention and endurance for each different I-V curve were measured to prove the reliability of the RRAM device. The detailed voltage manipulation confirmed the characteristics of multi-level cell (MLC) and conductance quantization. Lastly, synaptic functions such as potentiation and depression, paired-pulse depression, excitatory post-synaptic current, and spike-timing-dependent plasticity were verified. Collectively, we concluded that Pt/Al
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Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.