Evidence map›Paper›PMID 36014724›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnO

Pao-Hsun Huang, Zhi-Xuan Zhang, Chia-Hsun Hsu, Wan-Yu Wu, Sin-Liang Ou, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Pao-Hsun HuangSchool of Ocean Information Engineering, Jimei University, Jimei District, Xiamen 361021, China.ORCID 0000-0001-9161-3678
Zhi-Xuan ZhangSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Chia-Hsun HsuSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Wan-Yu WuDepartment of Materials Science and Engineering, National United University, Miaoli 36063, Taiwan.
Sin-Liang OuDepartment of Biomedical Engineering, Da-Yeh University, Changhua 51591, Taiwan.
Chien-Jung HuangDepartment of Applied Physics, National University of Kaohsiung, Kaohsiung University Road, Kaohsiung 81148, Taiwan.
Dong-Sing WuuDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan.ORCID 0000-0002-0314-8743
Shui-Yang LienSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Wen-Zhang ZhuSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.

Funding

Education Department of Fujian Province JAT190300Natural Science Foundation of Fujian Province 2020H0025Natural Science Foundation of Fujian Province 2020J05151Scientific and technological project in Xiamen 3502ZCQ20191002Scientific research projects of Jimei University ZQ2019032Scientific research projects of Xiamen University of Technology 40199029Scientific research projects of Xiamen University of Technology 405011904Scientific research projects of Xiamen University of Technology HK-HX201243Scientific research projects of Xiamen University of Technology HK-HX210106Scientific research projects of Xiamen University of Technology XPDKQ19006Scientific research projects of Xiamen University of Technology YKJ19001R
6 · The paper itself

Abstract

The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The SnO2 and oxygen-deficient Sn3O4 phases coexisting in PEALD SnOx films were found. The PEALD SnOx films are composed of intrinsic oxygen vacancies with O-Sn4+ bonds and then transformed into a crystalline SnO2 phase with increased substrate temperature, revealing a direct 3.5−4.0 eV band gap and 1.9−2.1 refractive index. Lower (<150 °C) and higher (>300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD SnOx films near an estimated 1.74 suggests the highest mobility of 12.89 cm2 V−1 s−1 at 300 °C.

Indexed as

plasma-enhanced atomic layer deposition (PEALD)substrate temperaturetin oxide (SnOx)

Identifiers

PMID36014724
PMCPMC9416374

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.