ArticleMicromachines2022
Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers.
Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Machine Learning-Assisted Burst Femtosecond Laser Polishing of Invar Alloy: Process Optimization and Performance Enhancement.Nanomaterials (Basel, Switzerland) · 2026Article
- Comprehensive Structural and Interfacial Characterization of Laser-Sliced SiC Wafers.Materials (Basel, Switzerland) · 2025Article
- An Exploratory Study of Laser Scribing Quality through Cross-Section Scribing Profiles.Micromachines · 2023Article
- High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting.Materials (Basel, Switzerland) · 2022Article
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Authors and funding
4 authors.
Funding
Abstract
With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade dicing suffers from problems such as debris contaminants and unnecessary thermal damage. In this work, a precision layered stealth dicing (PLSD) method by ultrafast lasers is proposed to separate the semi-insulated 4H-SiC wafer with a thickness of 508 μm. The laser power attenuates linearly from 100% to 62% in a gradient of 2% layer by layer from the bottom to the top of the wafer. A cross section with a roughness of about 1 μm was successfully achieved. We have analyzed the effects of laser pulse energy, pulse width, and crystal orientation of the SiC wafer. The anisotropy of the SiC wafer results in various qualities of PLSD cross sections, with the roughness of the crystal plane {10-10} being 20% lower than that of the crystal plane {11-20}.
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