Evidence map›Paper›PMID 35853856›Full record

ArticleLight, science & applications2022

Observation of polarity-switchable photoconductivity in III-nitride/MoS

Danhao Wang, Wentiao Wu, Shi Fang, Yang Kang, Xiaoning Wang, Wei Hu, Huabin Yu, Haochen Zhang, Xin Liu, Yuanmin Luo and 5 more

Abstract read
In one paragraph

Article in Light, science & applications, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.

0numbers the graph read from it
0cells of the map it votes in
8citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

8 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Mg-doped α-GaAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
  5. Balancing Carrier Dynamics in Oxygen-Vacancy-Tuned Amorphous GaAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
  6. Article
  7. Article
  8. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Danhao Wang *School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.ORCID http://orcid.org/0000-0001-5242-177X
Wentiao Wu *Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China.
Shi Fang *School of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.ORCID http://orcid.org/0000-0001-9255-1579
Yang KangSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Xiaoning WangHefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China.
Wei HuHefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei, 230029, China. whuustc@ustc.edu.cn.
Huabin YuSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Haochen ZhangSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Xin LiuSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Yuanmin LuoSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Jr-Hau HeDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China.ORCID http://orcid.org/0000-0003-1886-9241
Lan FuSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.ORCID http://orcid.org/0000-0002-9070-8373
Shibing LongSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China.
Sheng LiuSchool of Microelectronics, Wuhan University, Wuhan, 430072, China. shengliu@whu.edu.cn.
Haiding SunSchool of Microelectronics, University of Science and Technology of China, Hefei, 230029, China. haiding@ustc.edu.cn.ORCID http://orcid.org/0000-0001-8664-666X

Funding

National Natural Science Foundation of China (National Science Foundation of China) 51727901National Natural Science Foundation of China (National Science Foundation of China) 51727901, 52161145404, 61905236, 51961145110
6 · The paper itself

Abstract

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS

Identifiers

PMID35853856
PMCPMC9296537

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.