ArticleNanomaterials (Basel, Switzerland)2022
Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
10 citing papers in PubMed, 32 citations in OpenAlex.
- Dual Bipolar Resistive Switching in Wafer-Scalable 2D Perovskite Oxide Nanosheets-Based Memristor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiOMaterials (Basel, Switzerland) · 2023Article
- Double-Forming Mechanism of TaOMaterials (Basel, Switzerland) · 2023Article
- Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives.RSC advances · 2023Article
- Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System.Nanomaterials (Basel, Switzerland) · 2023Article
- Memristor-Based Signal Processing for Compressed Sensing.Nanomaterials (Basel, Switzerland) · 2023Review
- Organic Memristor with Synaptic Plasticity for Neuromorphic Computing Applications.Nanomaterials (Basel, Switzerland) · 2023Article
- Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.Materials (Basel, Switzerland) · 2023Article
- Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlOMaterials (Basel, Switzerland) · 2022Article
- Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbOMaterials (Basel, Switzerland) · 2022Article
Corrections and comments
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Authors and funding
3 authors at 1 institution in 1 country.
Funding
Abstract
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high- and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.