ArticleNature electronics2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.
Article in Nature electronics, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 29 papers.
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29 citing papers in PubMed, 125 citations in OpenAlex.
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- Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement.Small science · 2025Article
- High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.Nature communications · 2025Article
- A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection.Nature communications · 2025Article
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- Dielectric-Free Molybdenum Disulfide Transistors with In-Plane Gates.ACS applied materials & interfaces · 2025Article
- Two-dimensional BiACS nano · 2025Article
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Authors and funding
10 authors at 3 institutions in 3 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. We deliberately tune the Fermi level of the channel to maximize the energy distance between the charge carriers in the channel and the defect bands in the amorphous aluminium gate oxide. Charge trapping is highly sensitive to the energetic alignment of the Fermi level of the channel with the defect band in the insulator, and thus, our approach minimizes the amount of electrically active border traps without the need to reduce the total number of traps in the insulator.
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