ArticleNanomaterials (Basel, Switzerland)2022
Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
6 citing papers in PubMed.
- Diffusion-Induced Ordered Nanowire Growth: Mask Patterning Insights.Nanomaterials (Basel, Switzerland) · 2024Article
- Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111).Nanomaterials (Basel, Switzerland) · 2023Article
- Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots.Nanomaterials (Basel, Switzerland) · 2023Article
- Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition.Materials (Basel, Switzerland) · 2022Article
- Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration.Nanomaterials (Basel, Switzerland) · 2022Article
- Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory.Nanomaterials (Basel, Switzerland) · 2022Article
Corrections and comments
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Authors and funding
10 authors.
Funding
Abstract
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO
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Registered trials
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