Evidence map›Paper›PMID 35745316›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Stable Resistive Switching in ZnO/PVA:MoS

Tangyou Sun, Hui Shi, Shuai Gao, Zhiping Zhou, Zhiqiang Yu, Wenjing Guo, Haiou Li, Fabi Zhang, Zhimou Xu, Xiaowen Zhang

Open access · goldAbstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
2.5field-weighted citation impact, top 11% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed, 29 citations in OpenAlex.

  1. Review
  2. Growth of MoSNanomaterials (Basel, Switzerland) · 2024
    Article
  3. Article
  4. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors at 4 institutions in 1 country.

Tangyou SunGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.ORCID 0000-0002-9971-3793
Hui ShiGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Shuai GaoGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Zhiping ZhouState Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China.ORCID 0000-0001-9340-217X
Zhiqiang YuSchool of Electrical and Information Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.ORCID 0000-0003-1266-8609
Wenjing GuoGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Haiou LiGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Fabi ZhangGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Zhimou XuSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Xiaowen ZhangGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Guilin University of Electronic Technology · CNGuangxi University of Science and Technology · CNHuazhong University of Science and Technology · CNPeking University · CN

Funding

Guangxi Innovation Research Team Project 2018GXNSFGA281004Guangxi Natural Science Foundation 2018GXNSFDA294002Innovation Project of Guang Xi Graduate Education 2021YCXS022National Nature Science Foundation of China 61764001
6 · The paper itself

Abstract

Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS

Indexed as

data retentionendurancememory windowresistive switchingZnO/PVA:MoS2

Identifiers

PMID35745316
PMCPMC9230909
OpenAlexW4282836389

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.