ArticleMicromachines2022
Understanding the Mechanisms of SiC-Water Reaction during Nanoscale Scratching without Chemical Reagents.
Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
3 citing papers in PubMed.
- Investigating Surface Morphology and Subsurface Damage Evolution in Nanoscratching of Single-Crystal 4H-SiC.Micromachines · 2025Article
- Fabrication and Application of Grinding Wheels with Soft and Hard Composite Structures for Silicon Carbide Substrate Precision Processing.Materials (Basel, Switzerland) · 2024Article
- Editorial for the Special Issue on Advanced Manufacturing Technology and Systems.Micromachines · 2023Article
Corrections and comments
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Authors and funding
4 authors.
Funding
Abstract
Microcracks inevitably appear on the SiC wafer surface during conventional thinning. It is generally believed that the damage-free surfaces obtained during chemical reactions are an effective means of inhibiting and eliminating microcracks. In our previous study, we found that SiC reacted with water (SiC-water reaction) to obtain a smooth surface. In this study, we analyzed the interfacial interaction mechanisms between a 4H-SiC wafer surface (0001-) and diamond indenter during nanoscale scratching using distilled water and without using an acid-base etching solution. To this end, experiments and ReaxFF reactive molecular dynamics simulations were performed. The results showed that amorphous SiO
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