ArticleMicromachines2022
High-Temperature Ferroelectric Behavior of Al
Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
8 citing papers in PubMed.
- Thermal conductivity and optical phonon scattering of CMOS compatible aluminum nitride based ferroelectric thin films.Nature communications · 2026Article
- Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.Small methods · 2026Review
- Write cycling endurance exceeding 10Nature communications · 2026Article
- Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Unified differentiable learning of electric response.Nature communications · 2025Article
- New-Generation Ferroelectric AlScN Materials.Nano-micro letters · 2024Review
- Demonstration of 10 nm Ferroelectric AlMaterials (Basel, Switzerland) · 2024Article
- Editorial for Special Issue "Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices".Micromachines · 2023Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 °C. Polarization−electric field hysteresis loops between 23 and 400 °C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 °C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high−temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.